STUDY OF SPECTRAL DENSITY OF SERIES NOISE OF FIELD-EFFECT TRANSISTORS

被引：0
|
作者：
GAVRILOVA, IN
GOSTILO, VV
机构：
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 1991年 / 34卷 / 02期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An apparatus is developed for measurement of the spectral density of the series noise voltage of field-effect transistors within 10(-14)-3.10(-19) V2/Hz at temperatures of 90-300 K. Study results are presented for the noise characteristics of field-effect transistors used in precision detectors of ionizing radiation.
引用
收藏
页码：344 / 346
页数：3
相关论文
共 50 条
  • [41] TRANSFER-IMPEDANCE METHOD FOR NOISE IN FIELD-EFFECT TRANSISTORS
    VANVLIET, KM
    SOLID-STATE ELECTRONICS, 1979, 22 (03) : 233 - 236
  • [42] 1/F NOISE MEASUREMENTS ON HGCDTE FIELD-EFFECT TRANSISTORS
    CELIKBUTLER, Z
    ALAMGIR, SM
    BORRELLO, SR
    SOLID-STATE ELECTRONICS, 1990, 33 (05) : 585 - 590
  • [43] Noise Spectroscopy of Traps in Silicon Nanowire Field-Effect Transistors
    Pud, S.
    Li, J.
    Petrychuk, M.
    Feste, S.
    Offenhaeusser, A.
    Mantl, S.
    Vitusevich, S.
    2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 242 - 245
  • [44] LOW-FREQUENCY NOISE IN JUNCTION FIELD-EFFECT TRANSISTORS
    KANDIAH, K
    WHITING, FB
    SOLID-STATE ELECTRONICS, 1978, 21 (08) : 1079 - 1088
  • [45] Enhanced shot noise in carbon nanotube field-effect transistors
    Betti, A.
    Fiori, G.
    Iannaccone, G.
    APPLIED PHYSICS LETTERS, 2009, 95 (25)
  • [46] CAUSE OF EXCESS NOISE IN FIELD-EFFECT TRANSISTORS WITH ISOLATED SHUTTER
    KARPOV, YS
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1969, 14 (04): : 644 - &
  • [47] Physics of noise in quantum-confined field-effect transistors
    Green, F
    Chivers, MJ
    PHYSICAL REVIEW B, 1996, 54 (08): : 5791 - 5800
  • [48] Effect of dielectric surface passivation on organic field-effect transistors: spectral analysis of the density of trap-states
    Yadav, Yogesh
    Singh, Samarendra Pratap
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (01)
  • [49] Mobility Degradation and Series Resistance in Graphene Field-Effect Transistors
    Jeppson, Kjell
    Asad, Muhammad
    Stake, Jan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (06) : 3091 - 3095
  • [50] Study of the bipolar operation of field-effect transistors
    Sudhakar, A.
    Pasha, I.A.
    Madhavi, D.
    Modelling, Measurement and Control A, 1993, 52 (04): : 23 - 38
12345