Enhanced shot noise in carbon nanotube field-effect transistors

被引：5
|
作者：
Betti, A. [1 ]
Fiori, G. [1 ]
Iannaccone, G. [1 ]
机构：
[1] Univ Pisa, Dipartimento Ingn Informaz Elettron Informat Tele, I-56122 Pisa, Italy
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 25期
关键词：
MULTITERMINAL DIFFUSIVE CONDUCTORS; UNIVERSALITY;
D O I：
10.1063/1.3274128
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green's functions formalism, and on a Monte Carlo approach to reproduce injection statistics. Noise enhancement is due to the correlation between trapping of holes from the drain into quasibound states in the channel and thermionic injection of electrons from the source, and can lead to an appreciable Fano factor of 1.22 at room temperature. (C) 2009 American Institute of Physics. [doi:10.1063/1.3274128]
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页数：3
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