STUDY OF SPECTRAL DENSITY OF SERIES NOISE OF FIELD-EFFECT TRANSISTORS

被引：0
|
作者：
GAVRILOVA, IN
GOSTILO, VV
机构：
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 1991年 / 34卷 / 02期
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暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An apparatus is developed for measurement of the spectral density of the series noise voltage of field-effect transistors within 10(-14)-3.10(-19) V2/Hz at temperatures of 90-300 K. Study results are presented for the noise characteristics of field-effect transistors used in precision detectors of ionizing radiation.
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页码：344 / 346
页数：3
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