EXPERIMENTAL STUDY OF SURFACE CHANNEL IN INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：4

|

作者：

BANDALI, MB

WRIGHT, GT

机构：

来源：

ELECTRONICS LETTERS | 1971年 / 7卷 / 5-6期

关键词：

D O I：

10.1049/el:19710092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：142 / &

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