首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
CHARACTERISTICS AND APPLICATIONS OF RCA INSULATED-GATE FIELD-EFFECT TRANSISTORS
被引:1
|
作者
:
GRISWOLD, DM
论文数:
0
引用数:
0
h-index:
0
GRISWOLD, DM
机构
:
来源
:
IEEE TRANSACTIONS ON BROADCAST AND TELEVISION RECEIVERS
|
1965年
/ BT11卷
/ 02期
关键词
:
D O I
:
10.1109/TBTR1.1965.4319904
中图分类号
:
TN [电子技术、通信技术];
学科分类号
:
0809 ;
摘要
:
引用
收藏
页码:9 / &
相关论文
共 50 条
[1]
SUBTHRESHOLD CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
TROUTMAN, RR
CHAKRAVARTI, SN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
CHAKRAVARTI, SN
[J].
IEEE TRANSACTIONS ON CIRCUIT THEORY,
1973,
CT20
(06):
: 659
-
665
[2]
PRINTABLE INSULATED-GATE FIELD-EFFECT TRANSISTORS
SIHVONEN, YT
论文数:
0
引用数:
0
h-index:
0
SIHVONEN, YT
PARKER, SG
论文数:
0
引用数:
0
h-index:
0
PARKER, SG
BOYD, DR
论文数:
0
引用数:
0
h-index:
0
BOYD, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(01)
: 96
-
&
[3]
EFFECT OF SURFACE TRAPS ON CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
OREILLY, TJ
论文数:
0
引用数:
0
h-index:
0
OREILLY, TJ
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(03)
: 267
-
&
[4]
TRANSIENT RESPONSE OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
OREILLY, TJ
论文数:
0
引用数:
0
h-index:
0
OREILLY, TJ
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(12)
: 947
-
+
[5]
PHYSICAL PROCESSES IN INSULATED-GATE FIELD-EFFECT TRANSISTORS
JOHNSON, JE
论文数:
0
引用数:
0
h-index:
0
JOHNSON, JE
[J].
SOLID-STATE ELECTRONICS,
1964,
7
(12)
: 861
-
871
[6]
PINCH OFF IN INSULATED-GATE FIELD-EFFECT TRANSISTORS
GOLDBERG, C
论文数:
0
引用数:
0
h-index:
0
GOLDBERG, C
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
PROCEEDINGS OF THE IEEE,
1964,
52
(04)
: 414
-
&
[7]
DESIGN AND CHARACTERISTICS OF N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS
CRITCHLOW, DL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
CRITCHLOW, DL
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
SCHUSTER, SE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
SCHUSTER, SE
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1973,
17
(05)
: 430
-
442
[8]
CURRENT VOLTAGE AND CAPACITANCE VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS
BAEK, J
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
BAEK, J
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
SHUR, MS
DANIELS, RR
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
DANIELS, RR
ARCH, DK
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
ARCH, DK
ABROKWAH, JK
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
ABROKWAH, JK
TUFTE, ON
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
TUFTE, ON
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1987,
34
(08)
: 1650
-
1657
[9]
NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
ELMANSY, YA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA, ONTARIO, CANADA
ELMANSY, YA
BOOTHROYD, AR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA, ONTARIO, CANADA
BOOTHROYD, AR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
: 241
-
253
[10]
NEW METHOD OF REDUCING INSTABILITY IN INSULATED-GATE FIELD-EFFECT TRANSISTORS
BRADLEY, J
论文数:
0
引用数:
0
h-index:
0
BRADLEY, J
[J].
ELECTRONICS LETTERS,
1967,
3
(11)
: 526
-
&
←
1
2
3
4
5
→