ELECTRON-TUNNELING IN SINGLE-BARRIER AND DOUBLE-BARRIER STRUCTURES

被引：9
|
作者：
CHOI, KK
NEWMAN, PG
FOLKES, PA
IAFRATE, GJ
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 40卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.40.8006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：8006 / 8009
页数：4
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