LOW-ENERGY ELECTRON-DIFFRACTION INVESTIGATIONS OF SI MOLECULAR-BEAM EPITAXY ONTO SI(100)

被引：32

|

作者：

HORN, M

GOTTER, U

HENZLER, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：727 / 730

页数：4

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