LOW-ENERGY ELECTRON-DIFFRACTION INVESTIGATIONS OF SI MOLECULAR-BEAM EPITAXY ONTO SI(100)

被引：32
|
作者：
HORN, M
GOTTER, U
HENZLER, M
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词：
D O I：
10.1116/1.584358
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：727 / 730
页数：4
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