THERMAL-STABILITY OF AL/NI GATE ALGAAS/GAAS MEMTS

被引：3
|
作者：
DEMUNARI, I [1 ]
FANTINI, F [1 ]
CONTI, P [1 ]
机构：
[1] CSELT SPA,PAOLO CONTI,I-10148 TURIN,ITALY
来源：
MICROELECTRONICS AND RELIABILITY | 1995年 / 35卷 / 03期
关键词：
D O I：
10.1016/0026-2714(95)93081-K
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The study on the instability of gate contacts of Al/Ni gate AlGaAs/GaAs HEMT's was performed by means of storage tests carried out at three different temperatures: 200 degrees C, 240 degrees C and 300 degrees C. Data from tests as long as 5000 hours were analyzed. At the highest temperature the main failure mode was the reaction between the Al of the gate electrode and the Au of the metallization. At 200 degrees C, 240 degrees C an increase of the barrier height was detected. The activation energy determined and the comparison with the data existing in literature is reported.
引用
收藏
页码：631 / 635
页数：5
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