CARRIER DIFFUSION IN SEMICONDUCTORS SUBJECT TO LARGE GRADIENTS OF EXCITED CARRIER DENSITY

被引：0
|
作者：
WAUTELET, M [1 ]
VANVECHTEN, JA [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：175 / 175
页数：1
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