CARRIER DIFFUSION IN SEMICONDUCTORS SUBJECT TO LARGE GRADIENTS OF EXCITED CARRIER DENSITY

被引：0

作者：

WAUTELET, M ^{[1
]}

VANVECHTEN, JA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1980年 / 25卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：175 / 175

页数：1

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