PLASMA CHEMISTRY OF FLUOROCARBONS AS RELATED TO PLASMA-ETCHING AND PLASMA POLYMERIZATION

被引：0
|
作者：
KAY, E
COBURN, J
DILKS, A
机构：
来源：
TOPICS IN CURRENT CHEMISTRY | 1980年 / 94卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：1 / 42
页数：42
相关论文
共 50 条
  • [41] PLASMA-ETCHING OF NONOXIDE CERAMICS
    MITOMO, M
    SATO, Y
    YASHIMA, I
    TSUTSUMI, M
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1991, 10 (02) : 83 - 84
  • [42] THE APPLICATION OF PLASMA MASS-SPECTROSCOPY TO PLASMA-ETCHING
    EISELE, KM
    VAKUUM-TECHNIK, 1983, 32 (02): : 48 - 52
  • [43] MICROSCOPIC UNIFORMITY IN PLASMA-ETCHING
    GOTTSCHO, RA
    JURGENSEN, CW
    VITKAVAGE, DJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2133 - 2147
  • [44] PLANAR PLASMA-ETCHING OF CHROMIUM
    NAGUIB, HM
    BOND, RA
    POLEY, HJ
    VACUUM, 1983, 33 (05) : 285 - 290
  • [45] EFFECT OF PHOTORESIST ON PLASMA-ETCHING
    TSOU, LY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (08) : 2354 - 2356
  • [46] ENDPOINT DETECTION IN PLASMA-ETCHING
    ROLAND, JP
    MARCOUX, PJ
    RAY, GW
    RANKIN, GH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 631 - 636
  • [47] REACTIVE ION ETCHING AND PLASMA-ETCHING OF TUNGSTEN
    VERDONCK, P
    BRASSEUR, G
    SWART, J
    MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 329 - 332
  • [48] THE BEHAVIOR OF THE ETCHING RATE IN A MODEL OF PLASMA-ETCHING
    KERN, M
    KOKSCH, N
    ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND MECHANIK, 1994, 74 (11): : 513 - 520
  • [49] THE EFFECT OF SUBWAFER DIELECTRICS ON PLASMA PROPERTIES IN PLASMA-ETCHING REACTORS
    HOEKSTRA, RJ
    KUSHNER, MJ
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (08) : 3668 - 3673
  • [50] OXYGEN PLASMA-ETCHING RESISTANCE OF PLASMA POLYMERIZED ORGANOMETALLIC FILM
    YAMADA, H
    SATOH, T
    ITOH, S
    HORI, M
    NAKAMURA, M
    MORITA, S
    HATTORI, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 175 - 180
12345