THE BEHAVIOR OF THE ETCHING RATE IN A MODEL OF PLASMA-ETCHING

被引：0

作者：

KERN, M ^{[1
]}

KOKSCH, N ^{[1
]}

机构：

[1] TECH UNIV DRESDEN, MATH ABT, INST ANAL, D-01062 DRESDEN, GERMANY

来源：

ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND MECHANIK | 1994年 / 74卷 / 11期

关键词：

D O I：

10.1002/zamm.19940741103

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

This paper is aimed at both the modelling of some volume and surface processes in plasma etching by ODE's and the qualitative study of the resulting system. The explicit construction of sequences of attractor enclosures allows to give sequences of bounds for the etching rate of the process.

引用

页码：513 / 520

页数：8

共 50 条

[1] A MODEL FOR PLASMA-ETCHING
PETIT, B
PELLETIER, J
[J]. COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II, 1986, 302 (03): : 121 - 124
[2] A GENERALIZED PLASMA-ETCHING MODEL
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[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 4199 - 4207
[3] PLASMA-ETCHING
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[J]. ACS SYMPOSIUM SERIES, 1983, 219 : 215 - 285
[4] PARALLEL PLATE PLASMA-ETCHING REACTOR MODEL - UNIFORMITY OF ETCHING
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[5] PLASMA-ETCHING OF ALUMINUM
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[6] PLASMA-ETCHING OF SIPOS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : C241 - C241
[7] ADVANCES IN PLASMA-ETCHING
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[J]. SOLID STATE TECHNOLOGY, 1991, 34 (04) : 105 - 105
[8] REACTIVE ION ETCHING AND PLASMA-ETCHING OF TUNGSTEN
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[J]. MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 329 - 332
[9] MICROWAVE PLASMA-ETCHING
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[J]. VACUUM, 1984, 34 (10-1) : 953 - 957
[10] PLASMA-ETCHING OF SIALON
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[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1983, 66 (09) : C168 - C168

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