Property of molecular beam epitaxy-grown ZnSe/GaAs

被引：0
|
作者：
Kim, Eundo [1 ,2 ]
Son, Young-Ho [1 ]
Cho, Seong Jin [2 ]
Hwang, Do Weon [1 ]
机构：
[1] ALPHA PLUS Co Ltd, R & D Ctr, Pohang 790834, South Korea
[2] Kyungsung Univ, Dept Phys, Busan 608736, South Korea
来源：
JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2007年 / 17卷 / 02期
关键词：
Ultra high vacuum (UHV); Molecular beam epitaxy (MBE); Effusion cell; plasma cell; ZnSe;
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy (AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD) and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.
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页码：52 / 56
页数：5
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