Property of molecular beam epitaxy-grown ZnSe/GaAs

被引：0
|
作者：
Kim, Eundo [1 ,2 ]
Son, Young-Ho [1 ]
Cho, Seong Jin [2 ]
Hwang, Do Weon [1 ]
机构：
[1] ALPHA PLUS Co Ltd, R & D Ctr, Pohang 790834, South Korea
[2] Kyungsung Univ, Dept Phys, Busan 608736, South Korea
来源：
JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2007年 / 17卷 / 02期
关键词：
Ultra high vacuum (UHV); Molecular beam epitaxy (MBE); Effusion cell; plasma cell; ZnSe;
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy (AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD) and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.
引用
收藏
页码：52 / 56
页数：5
相关论文
共 50 条
  • [41] Photoluminescence from modulation doped AlGaAs/ low-temperature molecular beam epitaxy-grown GaAs heterostructures
    [J]. Schulte, D., 1600, American Inst of Physics, Woodbury, NY, United States (78):
  • [42] Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies
    K. D. Mynbaev
    N. L. Bazhenov
    S. A. Dvoretsky
    N. N. Mikhailov
    V. S. Varavin
    D. V. Marin
    M. V. Yakushev
    [J]. Journal of Electronic Materials, 2018, 47 : 4731 - 4736
  • [43] Defect characterization of heavily Si-doped molecular beam epitaxy-grown GaAs by the monoenergetic positron method
    Wei, Long
    Cho, Yang-Koo
    Dosho, Chisei
    Kurihara, Toshikazu
    Tanigawa, Shoichiro
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (11 A): : 2863 - 2867
  • [44] ARSENIC DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    SHIBLI, SM
    TAMARGO, MC
    SKROMME, BJ
    SCHWARZ, SA
    SCHWARTZ, CL
    NAHORY, RE
    MARTIN, RJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 187 - 191
  • [45] Defects in metalorganic chemical vapor deposition epitaxy-grown ZnSe films on GaAs investigated by monoenergetic positrons
    Wei, Long
    Cho, Yang-Koo
    Dosho, Chisei
    Tanigawa, Shoichiro
    Yodo, Tokuo
    Yamashita, Ken
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (10): : 2442 - 2448
  • [46] Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers
    Luyo-Alvarado, J
    Melendez-Lira, M
    Lopez-Lopez, M
    Hernandez-Calderon, I
    Constantino, ME
    Navarro-Contreras, H
    Vidal, MA
    Takagi, Y
    Samonji, K
    Yonezu, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) : 1551 - 1557
  • [47] Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy
    H.-C. Ko
    Y.-S. Kim
    C.-O. Kim
    [J]. Applied Physics A, 1999, 68 : 627 - 629
  • [48] Deep level characterization of interface-engineered ZnSe layers grown by molecular beam epitaxy on GaAs
    Hierro, A
    Kwon, D
    Ringel, SA
    Brillson, LJ
    Young, AP
    Franciosi, A
    [J]. III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, 535 : 77 - 82
  • [49] Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen
    Yu, ZH
    Buczkowski, SL
    Giles, NC
    Myers, TH
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (01) : 82 - 84
  • [50] Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy
    Ko, HC
    Kim, YS
    Kim, CO
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 68 (06): : 627 - 629
12345