共 50 条
- [41] Oxidation resistance of Si3N4 ceramics with aluminum ion implantation Kuei Suan Jen Hsueh Pao/ Journal of the Chinese Ceramic Society, 2004, 32 (09): : 1060 - 1063
- [42] ETCHED ION TRACKS IN AMORPHOUS Si3N4 FILMS PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 2009, : 192 - +
- [43] ION-IMPLANTATION, ION-BEAM MIXING, AND ANNEALING STUDIES OF METALS IN AL2O3, SIC AND SI3N4 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3): : 167 - 175
- [44] The effect of ion implantation in the microstructure of Si3N4 films: An X-ray absorption study NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 113 (1-4): : 231 - 234
- [45] Effect of ion implantation in the microstructure of Si3N4 films: an x-ray absorption study Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1996, 113 (1-4): : 231 - 234
- [46] EFFECT OF EXCESS SILICON ON FORMATION OF ALPHA-SI3N4 IN IONIC IMPLANTATION OF NITROGEN DOKLADY AKADEMII NAUK SSSR, 1978, 240 (05): : 1108 - 1110
- [47] DAMAGE FORMATION AND ANNEALING OF ION-IMPLANTATION IN SI MATERIALS SCIENCE REPORTS, 1991, 6 (4-5): : 141 - 214
- [49] High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part I:: formation of thin silicide surface films NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 159 (03): : 142 - 157