FORMATION OF THIN SI3N4 FILMS BY NITROGEN ION-IMPLANTATION INTO SILICON

被引：49
|
作者：
YADAV, AD
JOSHI, MC
机构：
来源：
THIN SOLID FILMS | 1979年 / 59卷 / 03期
关键词：
D O I：
10.1016/0040-6090(79)90440-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：313 / 317
页数：5
相关论文
共 50 条
  • [31] MODELING THE SIMULTANEOUS PROCESS OF FORMATION OF SILYCIDES AND HIDDEN INSULATING SI3N4 LAYERS IN THE REGIME OF HIGH-INTENSE ION-IMPLANTATION
    KOMAROV, AF
    KOMAROV, FF
    FEDOTOV, SA
    ZHURNAL TEKHNICHESKOI FIZIKI, 1994, 64 (09): : 136 - 143
  • [32] Analysis of defect formation in Si3N4 films
    A. P. Garshin
    V. E. Shvaiko-Shvaikovskii
    V. L. Ugolkov
    Inorganic Materials, 2000, 36 : 162 - 166
  • [33] Analysis of defect formation in Si3N4 films
    Garshin, AP
    Shvaiko-Shvaikovskii, VE
    Ugolkov, VL
    INORGANIC MATERIALS, 2000, 36 (02) : 162 - 166
  • [34] Crystalline Si3N4 thin films on Si(111) and the 4x4 reconstruction on Si3N4(0001)
    Wang, XS
    Zhai, GJ
    Yang, JS
    Cue, NS
    PHYSICAL REVIEW B, 1999, 60 (04): : R2146 - R2149
  • [35] FORMATION OF ALN BY NITROGEN ION-IMPLANTATION
    RAUSCHENBACH, B
    KOLITSCH, A
    RICHTER, E
    THIN SOLID FILMS, 1983, 109 (01) : 37 - 45
  • [36] NITROGEN RELATED DOPING WITH IMPLANT SI3N4 FORMATION IN SI
    DAVIES, DE
    ADAMSKI, JA
    KENNEDY, EF
    APPLIED PHYSICS LETTERS, 1986, 48 (05) : 347 - 349
  • [37] Nitrogen reaction with silicon: Investigation of Si undercooling and Si3N4 growth
    Beaudhuin, M.
    Zaidat, K.
    Duffar, T.
    Lemiti, M.
    JOURNAL OF CRYSTAL GROWTH, 2011, 336 (01) : 77 - 81
  • [38] THE APPLICATION OF NITROGEN ION-IMPLANTATION IN SILICON TECHNOLOGY
    JOSQUIN, WJMJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 581 - 587
  • [39] Temperature Influence on the Properties of Thin Si3N4 Films
    Zakhvalinskii, V. S.
    Abakumov, P. V.
    Kuzmenko, A. P.
    Chekadanov, A. S.
    Piljuk, E. A.
    Rodriguez, V. G.
    Goncharov, I. J.
    Taran, S. V.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2015, 7 (04)
  • [40] ELECTRICAL-PROPERTIES OF THIN LPCVD SI3N4 FILMS ON MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON
    THANH, LD
    BALK, P
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C317 - C317
12345