FORMATION OF THIN SI3N4 FILMS BY NITROGEN ION-IMPLANTATION INTO SILICON

被引:49
|
作者
YADAV, AD
JOSHI, MC
机构
关键词
D O I
10.1016/0040-6090(79)90440-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:313 / 317
页数:5
相关论文
共 50 条
  • [1] FORMATION OF THIN SI3N4 FILMS BY NITROGEN ION-IMPLANTATION INTO SILICON
    YADAV, AD
    JOSHI, MC
    THIN SOLID FILMS, 1979, 58 (02) : 300 - 300
  • [2] SYNTHESIS OF SI3N4 AMORPHOUS FILMS DURING NITROGEN ION-IMPLANTATION TO SILICON
    ALEKSANDROV, PA
    BARANOVA, EK
    BUDARAGIN, VV
    DEMAKOV, KD
    KOTOV, EV
    SHEMARDOV, SG
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (23): : 43 - 45
  • [3] FORMATION OF MULTILAYER SI3N4 STRUCTURES BY NITROGEN ION-IMPLANTATION
    REESON, KJ
    HEMMENT, PLF
    PEART, RF
    MEEKISON, CD
    BOOKER, GR
    DAVIS, J
    ELECTRONICS LETTERS, 1986, 22 (09) : 467 - 469
  • [4] THE FORMATION OF BURIED SI3N4 LAYERS IN SILICON BY HIGH-DOSE NITROGEN ION-IMPLANTATION
    KREISSIG, U
    SKORUPA, W
    HENSEL, E
    THIN SOLID FILMS, 1983, 100 (03) : L25 - L28
  • [5] CONCENTRATION PROFILES OF PROJECTILES AND RECOILED NITROGEN IN SI AFTER ION-IMPLANTATION THROUGH SI3N4 FILMS
    HIRAO, T
    INOUE, K
    TAKAYANAGI, S
    YAEGASHI, Y
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 193 - 201
  • [6] FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION
    EDELMAN, FL
    KUZNETSOV, ON
    LEZHEIKO, LV
    LUBOPYTOVA, EV
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 13 - 15
  • [7] Formation of Si3N4 by nitrogen implantation into SiC
    Miyagawa, S
    Baba, K
    Ikeyama, M
    Saitoh, K
    Nakao, S
    Miyagawa, Y
    SURFACE & COATINGS TECHNOLOGY, 1996, 83 (1-3): : 128 - 133
  • [8] CONTROL OF INTERNAL-STRESS AND YOUNG MODULUS OF SI3N4 AND POLYCRYSTALLINE SILICON THIN-FILMS USING THE ION-IMPLANTATION TECHNIQUE
    TABATA, O
    SUGIYAMA, S
    TAKIGAWA, M
    APPLIED PHYSICS LETTERS, 1990, 56 (14) : 1314 - 1316
  • [9] Effect of ion-implantation on the microstructure of Si3N4 based ceramics
    Eabcsán, JK
    Maros, MB
    Wanderka, N
    Klaffke, D
    Schubert, H
    FRACTOGRAPHY OF ADVANCED CERAMICS II, 2005, 290 : 234 - 237
  • [10] Formation of Si3N4 and SiC composite by nitrogen implantation
    Miyagawa, S
    Ikeyama, M
    Saitoh, K
    Nakao, S
    Miyagawa, Y
    Hatada, R
    Baba, K
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1998, 253 (1-2): : 143 - 147