TEM INSITU INVESTIGATIONS OF THE CRYSTALLIZATION OF A-SI THIN-FILMS

被引：0
|
作者：
REICHE, M
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The crystallization of a-Si layers deposited on SiO2- or Si3N4 films has been investigated by in situ annealing in an HVEM. The different formation mechanisms of crystallites by a surface-induced crystallization are presented. Interfacial stresses were deduced to be the main reason for nucleation.
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页码：201 / 204
页数：4
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