FABRICATION OF MULTILAYER BARRIER LAYER CAPACITORS WITH SEMICONDUCTING (BA,SR)TIO3 CERAMICS

Multilayer barrier layer capacitors were successfully fabricated by utilizing potential barriers at grain boundaries of semiconducting (Ba,Sr)TiO3 ceramics in the temperature region above the Curie point of -140-degrees-C. A small amount of Mn improved the dissipation factor and temperature dependence of permittivity in the temperature region from -30-degrees-C to 100-degrees-C. Multilayer barrier layer capacitors were composed of 10 layers having 80-mum thickness per layer. Resistivity above 10(10) OMEGA . cm was attained at room temperature, and relative permittivities above 5500 and dissipation factors less than 2% were obtained in the temperature region from -30-degrees-C to 100-degrees-C.