FABRICATION OF MULTILAYER BARRIER LAYER CAPACITORS WITH SEMICONDUCTING (BA,SR)TIO3 CERAMICS

被引：7

作者：

ITOH, T

TASHIRO, S

IGARASHI, H

机构：

[1] Department of Electronic Engineering, The National Defense Academy, Hashirimizu, Yokosuka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期

关键词：

MULTILAYER CAPACITOR; BARRIER LAYER CAPACITOR; SEMICONDUCTING CERAMICS; GRAIN BOUNDARY; MN; PD ELECTRODE;

D O I：

10.1143/JJAP.32.4261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multilayer barrier layer capacitors were successfully fabricated by utilizing potential barriers at grain boundaries of semiconducting (Ba,Sr)TiO3 ceramics in the temperature region above the Curie point of -140-degrees-C. A small amount of Mn improved the dissipation factor and temperature dependence of permittivity in the temperature region from -30-degrees-C to 100-degrees-C. Multilayer barrier layer capacitors were composed of 10 layers having 80-mum thickness per layer. Resistivity above 10(10) OMEGA . cm was attained at room temperature, and relative permittivities above 5500 and dissipation factors less than 2% were obtained in the temperature region from -30-degrees-C to 100-degrees-C.

引用

页码：4261 / 4264

页数：4

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