FABRICATION OF MULTILAYER BARRIER LAYER CAPACITORS WITH SEMICONDUCTING (BA,SR)TIO3 CERAMICS

被引：7
|
作者：
ITOH, T
TASHIRO, S
IGARASHI, H
机构：
[1] Department of Electronic Engineering, The National Defense Academy, Hashirimizu, Yokosuka
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期
关键词：
MULTILAYER CAPACITOR; BARRIER LAYER CAPACITOR; SEMICONDUCTING CERAMICS; GRAIN BOUNDARY; MN; PD ELECTRODE;
D O I：
10.1143/JJAP.32.4261
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multilayer barrier layer capacitors were successfully fabricated by utilizing potential barriers at grain boundaries of semiconducting (Ba,Sr)TiO3 ceramics in the temperature region above the Curie point of -140-degrees-C. A small amount of Mn improved the dissipation factor and temperature dependence of permittivity in the temperature region from -30-degrees-C to 100-degrees-C. Multilayer barrier layer capacitors were composed of 10 layers having 80-mum thickness per layer. Resistivity above 10(10) OMEGA . cm was attained at room temperature, and relative permittivities above 5500 and dissipation factors less than 2% were obtained in the temperature region from -30-degrees-C to 100-degrees-C.
引用
收藏
页码：4261 / 4264
页数：4
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