Dislocation Nucleation in SiGe Nanoscale Islands Formed during Heteroepitaxial Growth

被引：0

作者：

Zinov'ev, V. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia

来源：

OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2009年 / 45卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

nanostructures; heteroepitaxy; dislocation nucleation; modeling;

D O I：

10.3103/S8756699009040086

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A model is proposed to predict the critical parameters (shape, size, element composition) of nanoislands for dislocation nucleation. The onset of plastic relaxation of three-dimensional islands formed during heteroepitaxy in the Stranski-Krastanov mode are considered theoretically for the Ge/Si(100) heterosystem as an example. The study is based on a combination of numerical and analytical approaches to the calculation of strains in three-dimensional island containing a dislocation. It is confirmed that dislocation nucleation in three-dimensional SiGe islands is not limited by the kinetic barrier.

引用

页码：332 / 336

页数：5

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