The influence of applied fields on the nucleation and growth of heteroepitaxial carbon films

被引：0
|
作者：
Mansurov, B. Z. [1 ]
机构：
[1] Al Farabi Kazakh Natl Univ, Alma Ata 480012, Kazakhstan
来源：
NANOSCALE DEVICES - FUNDAMENTALS AND APPLICATIONS | 2006年 / 233卷
关键词：
carbon films; applied fields; differential magnetron sputtering;
D O I：
10.1007/978-1-4020-5107-4_27
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
On the basis of a literature review and the comparison of physical and chemical properties of materials and calculations, it is shown that copper, saturated with hydrogen, is an appropriate substrate material for the heteroepitaxial growth of diamond films. Our estimates have shown that it is possible to create conditions for preferential oriented growth of diamond films by changing the magnitude and configuration of applied magnetic fields. On the basis of theoretical calculations the technological installation for the growth of carbon films by a method of differential magnetron sputtering has been developed and designed. The basic technological parameters of the installation are presented. Also the mathematical algorithm describing the deposition process of carbon films on a copper buffer layer is offered.
引用
收藏
页码：387 / 399
页数：13
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