The influence of applied fields on the nucleation and growth of heteroepitaxial carbon films

On the basis of a literature review and the comparison of physical and chemical properties of materials and calculations, it is shown that copper, saturated with hydrogen, is an appropriate substrate material for the heteroepitaxial growth of diamond films. Our estimates have shown that it is possible to create conditions for preferential oriented growth of diamond films by changing the magnitude and configuration of applied magnetic fields. On the basis of theoretical calculations the technological installation for the growth of carbon films by a method of differential magnetron sputtering has been developed and designed. The basic technological parameters of the installation are presented. Also the mathematical algorithm describing the deposition process of carbon films on a copper buffer layer is offered.