Dislocation Nucleation in SiGe Nanoscale Islands Formed during Heteroepitaxial Growth

被引：0
|
作者：
Zinov'ev, V. A. [1 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Pr Akad Lavrenteva 13, Novosibirsk 630090, Russia
来源：
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2009年 / 45卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
nanostructures; heteroepitaxy; dislocation nucleation; modeling;
D O I：
10.3103/S8756699009040086
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A model is proposed to predict the critical parameters (shape, size, element composition) of nanoislands for dislocation nucleation. The onset of plastic relaxation of three-dimensional islands formed during heteroepitaxy in the Stranski-Krastanov mode are considered theoretically for the Ge/Si(100) heterosystem as an example. The study is based on a combination of numerical and analytical approaches to the calculation of strains in three-dimensional island containing a dislocation. It is confirmed that dislocation nucleation in three-dimensional SiGe islands is not limited by the kinetic barrier.
引用
收藏
页码：332 / 336
页数：5
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