INTERFACE-PHONON-ASSISTED GAMMA-X TRANSITIONS IN SHORT-PERIOD SUPERLATTICES

被引：4
|
作者：
DUTTA, M [1 ]
STROSCIO, MA [1 ]
机构：
[1] USA,RES OFF,RES TRIANGLE PK,NC 27709
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 04期
关键词：
D O I：
10.1063/1.354060
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The dielectric continuum model of longitudinal-optical phonons in polar semiconductors is used to define the role of interface longitudinal-optical phonons- in affecting phonon-assisted GAMMA-x transitions in GaAs-AlAs and GaAs-GaP superlattices. In particular, the dielectric continuum model for interface optical phonons is used in conjunction with a Kronig-Penney model of the superlattice electronic properties for two purposes: to specify superlattice parameters where interface-phonon-assisted GAMMA-X transitions are expected and to estimate relative transition probability amplitudes for interface-phonon-assisted GAMMA-x transitions in selected short-period superlattices.
引用
收藏
页码：1693 / 1701
页数：9
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