INTERFACE-PHONON-ASSISTED GAMMA-X TRANSITIONS IN SHORT-PERIOD SUPERLATTICES

被引：4

作者：

DUTTA, M ^{[1
]}

STROSCIO, MA ^{[1
]}

机构：

[1] USA,RES OFF,RES TRIANGLE PK,NC 27709

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 04期

关键词：

D O I：

10.1063/1.354060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dielectric continuum model of longitudinal-optical phonons in polar semiconductors is used to define the role of interface longitudinal-optical phonons- in affecting phonon-assisted GAMMA-x transitions in GaAs-AlAs and GaAs-GaP superlattices. In particular, the dielectric continuum model for interface optical phonons is used in conjunction with a Kronig-Penney model of the superlattice electronic properties for two purposes: to specify superlattice parameters where interface-phonon-assisted GAMMA-X transitions are expected and to estimate relative transition probability amplitudes for interface-phonon-assisted GAMMA-x transitions in selected short-period superlattices.

引用

页码：1693 / 1701

页数：9

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