Properties of ZnO:Ga thin films deposited by RF magnetron sputtering under various RF power

被引：3
|
作者：
Kim, Deok Kyu [1 ]
Kim, Hong Bae [2 ]
机构：
[1] Samsung Elect Co Ltd, Adv Dev Team, Yongin 446711, Gyeonggi, South Korea
[2] Cheongju Univ, Dept Semicond Engn, Cheongju 360746, Chungbuk, South Korea
来源：
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY | 2015年 / 24卷 / 06期
关键词：
ZnO:Ga; RF magnetron sputtering; RF power; interstitial Ga ion;
D O I：
10.5757/ASCT.2015.24.6.242
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO: Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% Ga2O3) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO: Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.
引用
收藏
页码：242 / 244
页数：3
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