Thickness dependence of properties of ZnO:Ga films deposited by rf magnetron sputtering

被引：110
|
作者：
Yu, XH [1 ]
Ma, J
Ji, F
Wang, YH
Cheng, CF
Ma, HL
机构：
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
[2] Shandong Normal Univ, Dept Phys, Jinan 250014, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2005年 / 245卷 / 1-4期
关键词：
ZnO : Ga; magnetron sputtering; film thickness; electrical and optical properties;
D O I：
10.1016/j.apsusc.2004.10.022
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Gallium-doped zinc oxide (ZnO:Ga) films are prepared on glass substrates by rf magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZnO:Ga films with various thickness are studied in detail. The crystal structure of the ZnO:Ga films is hexagonal wurtzite. The orientation for all the obtained films is along the c-axis perpendicular to the substrate. It is observed that with an increase in film thickness, the crystallite sizes of the films are increased. The lowest electrical resistivity among the films is found to be about 3.1 x 10(-4) Omega cm and the average transmittance for all films including substrates is over 83% in the visible range. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：310 / 315
页数：6
相关论文
共 50 条
  • [1] Thickness dependence of microstructural evolution of ZnO films deposited by rf magnetron sputtering
    Yong Eui Lee
    Young Jin Kim
    Hyeong Joon Kim
    [J]. Journal of Materials Research, 1998, 13 : 1260 - 1265
  • [2] Thickness dependence of microstructural evolution of ZnO films deposited by rf magnetron sputtering
    Lee, YE
    Kim, YJ
    Kim, HJ
    [J]. JOURNAL OF MATERIALS RESEARCH, 1998, 13 (05) : 1260 - 1265
  • [3] Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering
    H. Mahdhi
    J. L. Gauffier
    K. Djessas
    Z. Ben Ayadi
    [J]. Journal of Materials Science: Materials in Electronics, 2017, 28 : 5021 - 5028
  • [4] Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering
    Mahdhi, H.
    Gauffier, J. L.
    Djessas, K.
    Ben Ayadi, Z.
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (06) : 5021 - 5028
  • [5] Correction to: Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering
    H. Mahdhi
    J. L. Gauffier
    K. Djessas
    Z. Ben Ayadi
    [J]. Journal of Materials Science: Materials in Electronics, 2018, 29 : 6127 - 6127
  • [6] Temperature Dependence of Ga:ZnO Film Deposited By RF Magnetron Sputtering
    Shain, Farah Lyana
    Mani, Azmizam Manie
    Li, Lam Mui
    Salleh, Saafie
    Alias, Afishah
    [J]. 2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE), 2014, : 479 - 482
  • [7] Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering
    张化福
    类成新
    刘汉法
    袁长坤
    [J]. Journal of Semiconductors, 2009, 30 (04) : 19 - 22
  • [8] Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering
    Zhang Huafu
    Lei Chengxin
    Liu Hanfa
    Yuan Changkun
    [J]. JOURNAL OF SEMICONDUCTORS, 2009, 30 (04)
  • [9] Ga DOPED ZnO THIN FILMS DEPOSITED BY RF MAGNETRON SPUTTERING - PREPARATION AND PROPERTIES
    Irimia, M.
    Rambu, A. P.
    Zodieru, G.
    Leonte, I. I.
    Purica, M.
    Iacomi, F.
    [J]. 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 2011, : 287 - 290
  • [10] Properties of ZnO:Ga thin films deposited by RF magnetron sputtering under various RF power
    Kim, Deok Kyu
    Kim, Hong Bae
    [J]. APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2015, 24 (06): : 242 - 244
12345