Thickness dependence of properties of ZnO:Ga films deposited by rf magnetron sputtering

被引：110

作者：

Yu, XH ^{[1
]}

Ma, J

Ji, F

Wang, YH

Cheng, CF

Ma, HL

机构：

[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China

[2] Shandong Normal Univ, Dept Phys, Jinan 250014, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2005年 / 245卷 / 1-4期

关键词：

ZnO : Ga; magnetron sputtering; film thickness; electrical and optical properties;

D O I：

10.1016/j.apsusc.2004.10.022

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gallium-doped zinc oxide (ZnO:Ga) films are prepared on glass substrates by rf magnetron sputtering at room temperature. The structural, electrical and optical properties of the ZnO:Ga films with various thickness are studied in detail. The crystal structure of the ZnO:Ga films is hexagonal wurtzite. The orientation for all the obtained films is along the c-axis perpendicular to the substrate. It is observed that with an increase in film thickness, the crystallite sizes of the films are increased. The lowest electrical resistivity among the films is found to be about 3.1 x 10(-4) Omega cm and the average transmittance for all films including substrates is over 83% in the visible range. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：310 / 315

页数：6

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