Characteristics of Ga doped ZnO Thin Films Deposited by RF Magnetron Sputtering with Base Pressure

被引：5
|
作者：
Kim, Deok Kyu [1 ]
机构：
[1] Wonkwang Univ, Dept Elect Engn, Iksan 54538, South Korea
来源：
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY | 2019年 / 28卷 / 01期
关键词：
Ga doped ZnO; RF magnetron sputtering; Base pressure; Grain size; SUBSTRATE-TEMPERATURE; DIFFUSION; OXYGEN;
D O I：
10.5757/ASCT.2019.28.1.13
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ga doped ZnO thin films were deposited with various base pressure by RF magnetron sputtering, and their structural, optical, and electrical properties were studied. Effects of base pressure on the properties of Ga doped ZnO thin films were confirmed and a high quality thin film was obtained by controlling the base pressure. In our case, as the base pressure decreases, the crystal quality is improved, the surface roughness is increased, the sheet resistance is decreased and the figure of merit is increased. According to X-ray diffraction results, the decrease of sheet resistance is caused by increasing the grain size. The transmittance in visible region (400 similar to 800 nm) had 85 similar to 87%. Therefore, the base pressure is a key parameter for obtaining high quality film.
引用
收藏
页码：13 / 15
页数：3
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