ETCHING MECHANISM OF SIO2 IN CF4-H2 MIXED GAS PLASMA

被引：0

|

作者：

ARIKADO, T ^{[1
]}

HORIUCHI, S ^{[1
]}

机构：

[1] NICHIDEN TOSHIBA INFORMAT SYST INC,KAWASAKI CITY,KANAGAWA 210,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期

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D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：C88 / C88

页数：1

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