TRANSPORT MEASUREMENTS ON INP INVERSION METAL-OXIDE SEMICONDUCTOR TRANSISTORS

被引：0
|
作者：
VONKLITZING, K [1 ]
ENGLERT, T [1 ]
FRITZSCHE, D [1 ]
机构：
[1] FTZ,DEUTSCHEN BUNDESPOST FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5893 / 5897
页数：5
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