InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding

被引：9
|
作者：
Forsberg, M
Pasquariello, D
Camacho, M
Bergman, D
机构：
[1] Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Micron Laser Syst, SE-18303 Taby, Sweden
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 03期
关键词：
C-V measurement; InP; Si; MOS; oxygen plasma; wafer bonding;
D O I：
10.1007/s11664-003-0180-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, InP metal-oxide-semiconductor (MOS) structures are fabricated by transferring thermally grown SiO2 to InP from oxidized Si wafers using oxygen plasma assisted wafer bonding, followed by annealing at either 125degreesC or at 400degreesC. Well-defined accumulation and inversion regions in recorded capacitance-voltage (C-V) curves were obtained. The long-term stability was comparable to what has been previously reported. The structures exhibited high breakdown fields, equivalent to thermally grown SiO2-Si MOS structures. The transferring process was also used to fabricate bonded Si MOS structures.
引用
收藏
页码：111 / 116
页数：6
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