InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding

In this paper, InP metal-oxide-semiconductor (MOS) structures are fabricated by transferring thermally grown SiO2 to InP from oxidized Si wafers using oxygen plasma assisted wafer bonding, followed by annealing at either 125degreesC or at 400degreesC. Well-defined accumulation and inversion regions in recorded capacitance-voltage (C-V) curves were obtained. The long-term stability was comparable to what has been previously reported. The structures exhibited high breakdown fields, equivalent to thermally grown SiO2-Si MOS structures. The transferring process was also used to fabricate bonded Si MOS structures.