TRANSPORT MEASUREMENTS ON INP INVERSION METAL-OXIDE SEMICONDUCTOR TRANSISTORS

被引：0
|
作者：
VONKLITZING, K [1 ]
ENGLERT, T [1 ]
FRITZSCHE, D [1 ]
机构：
[1] FTZ,DEUTSCHEN BUNDESPOST FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5893 / 5897
页数：5
相关论文
共 50 条
  • [21] Operation and design of metal-oxide tunnel transistors
    J Appl Phys, 9 (5021):
  • [22] NOISE MEASUREMENTS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BELOW SATURATION
    DECKER, M
    GOUSKOV, L
    RIGAUD, D
    ELECTRONICS LETTERS, 1967, 3 (12) : 565 - &
  • [23] Operation and design of metal-oxide tunnel transistors
    Rendell, RW
    Buot, FA
    Snow, ES
    Campbell, PM
    Park, D
    Marrian, CRK
    Magno, R
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 5021 - 5031
  • [24] CHARGE TRANSPORT AND STORAGE IN ION-IMPLANTED METAL-OXIDE SEMICONDUCTOR STRUCTURES
    AUGULIS, L
    PRANEVICIUS, L
    VOSYLIUS, J
    APPLICATIONS OF SURFACE SCIENCE, 1982, 10 (03): : 349 - 356
  • [25] FIELD EFFECT TRANSISTORS .2. SURFACE FIELD EFFECT TRANSISTORS (METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS)
    GOECKE, D
    MICROTECNIC, 1967, 21 (05): : 491 - &
  • [26] METAL TRANSPORT IN VOIDS AT METAL-OXIDE INTERFACES
    HOWES, VR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (09) : 1286 - &
  • [27] THE ANODIC OXIDE OF INP AND ITS APPLICATION TO INP METAL-INSULATOR SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    YAMAMOTO, A
    SHIBUKAWA, A
    YAMAGUCHI, M
    UEMURA, C
    THIN SOLID FILMS, 1983, 103 (1-2) : 95 - 105
  • [28] RELIABILITY STUDY ON RAPID THERMAL PROCESSED METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    LEE, SK
    KU, YH
    KWONG, DL
    LEE, CO
    SOLID-STATE ELECTRONICS, 1988, 31 (10) : 1509 - 1512
  • [29] EQUIVALENT 2-PORT THERMAL-NOISE REPRESENTATION OF METAL-OXIDE SEMICONDUCTOR TRANSISTORS
    MAVOR, J
    REED, KB
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 111 - &
  • [30] Toward Low-Power Cryogenic Metal-Oxide Semiconductor Field-Effect Transistors
    Knoch, Joachim
    Richstein, Benjamin
    Han, Yi
    Frentzen, Michael
    Schreiber, Lars Rainer
    Klos, Jan
    Raffauf, Lena
    Wilck, Noel
    Koenig, Dirk
    Zhao, Qing-Tai
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (13):
12345