GENERATION-RECOMBINATION PHENOMENA IN ALMOST IDEAL SILICON P-N-JUNCTIONS

被引：22

作者：

CEROFOLINI, GF ^{[1
]}

POLIGNANO, ML ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,I-20041 AGRATE,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6349 / 6356

页数：8

共 50 条

[41] RECOMBINATION CURRENT IN FORWARD-BIASED P-N-JUNCTIONS
SHUR, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) : 1564 - 1565
[42] ON THE GENERATION RECOMBINATION CURRENTS IN P-N-JUNCTIONS OF SEMICONDUCTORS WITH CONTINUOUS GAP-STATE SPECTRUM
LEIDERMAN, AY
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 87 (01): : 363 - 372
[43] CURRENT NOISE DUE TO GENERATION AND RECOMBINATION OF CARRIERS IN FORWARD-BIASED P-N-JUNCTIONS
DAI, YS
CHEN, HX
SOLID-STATE ELECTRONICS, 1991, 34 (03) : 259 - 264
[44] ANISOTROPY OF AVALANCHE BREAKDOWN IN SILICON P-N-JUNCTIONS
KYUREGYAN, AS
SOROKIN, YG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1232 - 1234
[45] QUANTUM-SIZE P-N-JUNCTIONS IN SILICON
BAGRAEV, NT
KLYACHKIN, LE
MALYARENKO, AM
SUKHANOV, VL
SOLID-STATE ELECTRONICS, 1991, 34 (10) : 1149 - 1156
[46] PROBLEM OF THE BREAKDOWN VOLTAGE OF P-N-JUNCTIONS IN SILICON
MASLENNIKOV, NM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (06): : 589 - 591
[47] THEORETICAL INVESTIGATION ON GENERATION CURRENT IN SILICON P-N-JUNCTIONS UNDER REVERSE BIAS
CALZOLARI, PU
GRAFFI, S
SOLID-STATE ELECTRONICS, 1972, 15 (09) : 1003 - +
[48] Noise in almost ideal n+-p junctions
Basso, G
Pellegrini, B
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 538 - 541
[49] Simplified and improved model of ideal and almost ideal silicon p-n junctions. The role of oxygen
1600, (71):
[50] DEEP LEVEL CENTERS IN ORDINARY SILICON P-N-JUNCTIONS
FUJITA, Y
SHINOHARA, S
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 33 (04) : 1174 - +

← 1 2 3 4 5 →