GENERATION-RECOMBINATION PHENOMENA IN ALMOST IDEAL SILICON P-N-JUNCTIONS

被引：22
|
作者：
CEROFOLINI, GF [1 ]
POLIGNANO, ML [1 ]
机构：
[1] SGS THOMSON MICROELECTR,I-20041 AGRATE,ITALY
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期
关键词：
D O I：
10.1063/1.342098
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：6349 / 6356
页数：8
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