A SUPERLATTICE GAAS/INGAAS-ON-GAAS PHOTODETECTOR FOR 1.3-MU-M APPLICATIONS

被引:13
|
作者
ZIRNGIBL, M
BISCHOFF, JC
THERON, D
ILEGEMS, M
机构
关键词
D O I
10.1109/55.29671
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:336 / 338
页数:3
相关论文
共 50 条
  • [31] LOW-THRESHOLD, ELECTRICALLY INJECTED IN-GAASP (1.3-MU-M) VERTICAL-CAVITY LASERS ON GAAS SUBSTRATES
    DUDLEY, JJ
    BABIC, DI
    MIRIN, R
    YANG, L
    MILLER, BI
    RAM, RJ
    REYNOLDS, T
    HU, EL
    BOWERS, JE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2119 - 2120
  • [32] 1.3-MU-M INGAASP RIDGE WAVE-GUIDE LASER ON GAAS AND SILICON SUBSTRATES BY THIN-FILM TRANSFER
    SHIEH, CL
    CHI, JY
    ARMIENTO, CA
    HAUGSJAA, PO
    NEGRI, A
    WANG, WI
    ELECTRONICS LETTERS, 1991, 27 (10) : 850 - 851
  • [33] Interdiffusion phenomena in InGaAs/GaAs superlattice structures
    Sarikavak, B.
    Ozturk, M. K.
    Mammadov, T. S.
    Ozcelik, S.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2010, 45 (05) : 517 - 524
  • [34] Interdiffusion phenomena in InGaAs/GaAs superlattice structures
    Sarikavak, B. (beyzas@gmail.com), 1600, Wiley-VCH Verlag (45):
  • [35] Electroabsorption waveguide modulators at 1.3 mu m fabricated on GaAs substrates
    Loi, KK
    Shen, L
    Wieder, HH
    Chang, WSC
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (09) : 1229 - 1231
  • [36] GaInNAs/GaAs MQW pin photodetector for the 1.3 μm optical communications window
    Khalil, Hagir Mohammed
    Mazzucato, Simone
    Balkan, Naci
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, 2013, 10 (04): : 577 - 580
  • [37] AGING ANALYSIS OF NMOS OF A 1.3-MU-M PARTIALLY DEPLETED SIMOX SOI TECHNOLOGY COMPARISON WITH A 1.3-MU-M BULK TECHNOLOGY
    REIMBOLD, G
    AUBERTONHERVE, AJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (02) : 364 - 370
  • [38] Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm
    Ye, Hong
    Song, Yuxin
    Gu, Yi
    Wang, Shumin
    AIP ADVANCES, 2012, 2 (04):
  • [39] InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
    Ustinov, VM
    Maleev, NA
    Zhukov, AE
    Kovsh, AR
    Egorov, AY
    Lunev, AV
    Volovik, BV
    Krestnikov, IL
    Musikhin, YG
    Bert, NA
    Kop'ev, PS
    Alferov, ZI
    Ledentsov, NN
    Bimberg, D
    APPLIED PHYSICS LETTERS, 1999, 74 (19) : 2815 - 2817
  • [40] Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm
    Goldmann, Elias
    Paul, Matthias
    Krause, Florian F.
    Mueller, Knut
    Kettler, Jan
    Mehrtens, Thorsten
    Rosenauer, Andreas
    Jetter, Michael
    Michler, Peter
    Jahnke, Frank
    APPLIED PHYSICS LETTERS, 2014, 105 (15)