Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm

被引：19

作者：

Goldmann, Elias ^{[1
]}

Paul, Matthias ^{[2
]}

Krause, Florian F. ^{[3
]}

Mueller, Knut ^{[3
]}

Kettler, Jan ^{[2
]}

Mehrtens, Thorsten ^{[3
]}

Rosenauer, Andreas ^{[3
]}

Jetter, Michael ^{[2
]}

Michler, Peter ^{[2
]}

Jahnke, Frank ^{[1
]}

机构：

[1] Univ Bremen, Inst Theoret Phys, D-28334 Bremen, Germany

[2] Univ Stuttgart, Inst Halbleiteropt & Funktionelle Grenzflachen, D-70569 Stuttgart, Germany

[3] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 15期

关键词：

TRANSMISSION ELECTRON-MICROSCOPY; CHEMICAL-VAPOR-DEPOSITION; GAAS; SEMICONDUCTORS; IMAGES;

D O I：

10.1063/1.4898186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3 mu m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 20-40 nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1 nm and 5 nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified. (C) 2014 AIP Publishing LLC.

引用

页数：5

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