INGAAS/GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS ON (311)B GAAS SUBSTRATE

被引：26
|
作者：
KANEKO, Y [1 ]
NAKAGAWA, S [1 ]
TAKEUCHI, T [1 ]
MARS, DE [1 ]
YAMADA, N [1 ]
MIKOSHIBA, N [1 ]
机构：
[1] HEWLETT PACKARD CORP,PALO ALTO,CA 94304
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 10期
关键词：
MOLECULAR BEAM EPITAXIAL GROWTH; VERTICAL CAVITY SURFACE EMITTING LASERS;
D O I：
10.1049/el:19950549
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs/GaAs vertical cavity top-emitting dielectric-mirror surface-emitting lasers have been fabricated on a (311)B GaAs substrate. The threshold current was 25 mA at a lasing wavelength of 0.97 mu m under pulsed operation at room temperature. The output was linearly polarised in the [233] direction.
引用
收藏
页码：805 / 806
页数：2
相关论文
共 50 条
  • [41] LOW-THRESHOLD MESA-ETCHED VERTICAL-CAVITY INGAAS/GAAS SURFACE-EMITTING LASERS GROWN BY MOCVD
    MUKAIHARA, T
    HAYASHI, Y
    HATORI, N
    OHNOKI, N
    MATSUTANI, A
    KOYAMA, F
    IGA, K
    [J]. ELECTRONICS LETTERS, 1995, 31 (08) : 647 - 648
  • [42] 1.3-μm InGaAs vertical-cavity surface-emitting lasers
    Hammar, M
    von Würtemberg, RM
    Sundgren, P
    Berggren, J
    Larsson, A
    Söderberg, E
    Modh, P
    Gustavsson, J
    Ghisoni, M
    Chitica, N
    [J]. 2005 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS (LEOS), 2005, : 395 - 396
  • [43] P-type delta-doped InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
    Hatori, N
    Mizutani, A
    Nishiyama, N
    Motomura, F
    Koyama, F
    Iga, K
    [J]. ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1999, 82 (04): : 54 - 60
  • [44] BISTABILITY AND OPTICAL SWITCHING IN AN ALAS-GAAS-INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASER
    DEPPE, DG
    LEI, C
    LEE, WD
    ROGERS, TJ
    CAMPBELL, JC
    STREETMAN, BG
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2699 - 2699
  • [45] Growth and characterization of vertical-cavity surface-emitting lasers grown on (311)A-oriented GaAs substrates by molecular beam epitaxy
    Takahashi, M
    Vaccaro, PO
    Watanabe, T
    Mukaihara, T
    Koyama, F
    Iga, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12A): : 6102 - 6107
  • [46] Highly stable single polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser on GaAs (311)B substrate under high-speed modulation
    [J]. Arai, Masakazu, 1600, JJAP, Tokyo (39):
  • [47] Highly stable single polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser on GaAs (311)B substrate under high-speed modulation
    Arai, M
    Nishiyama, N
    Shinada, S
    Matsutani, A
    Koyama, F
    Iga, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (8B): : L858 - L860
  • [48] Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition
    Tateno, K
    Ohiso, Y
    Amano, C
    Wakatsuki, A
    Kurokawa, T
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (25) : 3395 - 3397
  • [49] Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers
    Xiang, Yu
    Reuterskiold-Hedlund, Carl
    Yu, Xingang
    Yang, Chen
    Zabel, Thomas
    Hammar, Mattias
    Akram, Muhammad Nadeem
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (07) : 721 - 724
  • [50] LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers
    Reginski, K
    Malag, A
    Radomska, D
    Bugajski, M
    [J]. SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 333 - 336
12345