LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers

被引：0
|
作者：
Reginski, K
Malag, A
Radomska, D
Bugajski, M
机构：
来源：
SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96) | 1996年
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we report on the optimization of MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growing LT-GaAs layers have been found as well as test processes of growing the laser structure at the optimum conditions have been performed. Although numerous optoelectronic applications of LT GaAs have been demonstrated we believe that this is one of the rare cases when LT GaAs has been used in semiconductor laser technology.
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页码：333 / 336
页数：4
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