INGAAS/GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS ON (311)B GAAS SUBSTRATE

被引：26
|
作者：
KANEKO, Y [1 ]
NAKAGAWA, S [1 ]
TAKEUCHI, T [1 ]
MARS, DE [1 ]
YAMADA, N [1 ]
MIKOSHIBA, N [1 ]
机构：
[1] HEWLETT PACKARD CORP,PALO ALTO,CA 94304
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 10期
关键词：
MOLECULAR BEAM EPITAXIAL GROWTH; VERTICAL CAVITY SURFACE EMITTING LASERS;
D O I：
10.1049/el:19950549
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InGaAs/GaAs vertical cavity top-emitting dielectric-mirror surface-emitting lasers have been fabricated on a (311)B GaAs substrate. The threshold current was 25 mA at a lasing wavelength of 0.97 mu m under pulsed operation at room temperature. The output was linearly polarised in the [233] direction.
引用
收藏
页码：805 / 806
页数：2
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