SATURATION OF AC SURFACE PHOTOVOLTAGES DUE TO PHOTOCAPACITANCES IN A STRONGLY-INVERTED OXIDIZED P-TYPE SILICON-WAFER

被引：3
|
作者：
MUNAKATA, C
HONMA, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 04期
关键词：
D O I：
10.1143/JJAP.26.564
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：564 / 567
页数：4
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  • [1] SATURATION OF AC SURFACE PHOTOVOLTAGES DUE TO PHOTOCAPACITANCES IN A STRONGLY-INVERTED OXIDIZED p-TYPE SILICON WAFER.
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  • [2] Ac SURFACE PHOTOVOLTAGES IN STRONGLY-INVERTED OXIDIZED p-TYPE SILICON WAFERS.
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  • [10] EFFECTS OF CHEMICAL SURFACE TREATMENTS ON THE GENERATION OF AC SURFACE PHOTOVOLTAGES IN P-TYPE SILICON-WAFERS
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