SATURATION OF AC SURFACE PHOTOVOLTAGES DUE TO PHOTOCAPACITANCES IN A STRONGLY-INVERTED OXIDIZED P-TYPE SILICON-WAFER

被引：3

|

作者：

MUNAKATA, C

HONMA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 04期

关键词：

D O I：

10.1143/JJAP.26.564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：564 / 567

页数：4

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