共 42 条
- [1] Ac surface photovoltages in p-type silicon wafers oxidized in water-free and wet ambients Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (09): : 1770 - 1771
- [2] AC SURFACE PHOTOVOLTAGES IN STRONGLY-INVERTED OXIDIZED P-TYPE SILICON-WAFERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1984, 23 (11): : 1451 - 1461
- [4] Ac SURFACE PHOTOVOLTAGES IN STRONGLY-INVERTED OXIDIZED p-TYPE SILICON WAFERS. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1984, 23 (11): : 1451 - 1461
- [5] EFFECT OF ALUMINUM ON AC SURFACE PHOTOVOLTAGES IN THERMALLY OXIDIZED N-TYPE SILICON-WAFERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (03): : 729 - 731
- [6] AC PHOTOVOLTAIC IMAGES OF THERMALLY OXIDIZED P-TYPE SILICON-WAFERS CONTAMINATED WITH METALS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (08): : 2319 - 2321
- [8] ANALYSIS OF AC SURFACE PHOTOVOLTAGES IN A DEPLETED OXIDIZED p-TYPE SILICON WAFER. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (06): : 807 - 812
- [10] Decay times of impulse surface photovoltages in p-type silicon wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (10A): : 6592 - 6594