FREQUENCY-DEPENDENT PHOTOVOLTAGE-GENERATING AREAS IN A STRONGLY-INVERTED OXIDIZED p-TYPE SILICON WAFER.

被引：0
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作者：
Munakata, Chusuke [1 ]
Honma, Noriaki [1 ]
机构：
[1] Hitachi Ltd, Kokubunji, Jpn, Hitachi Ltd, Kokubunji, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 10期
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页码：1663 / 1666
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