INALAS/INGAAS/INP HEMTS WITH HIGH BREAKDOWN VOLTAGES USING DOUBLE-RECESS GATE PROCESS

被引：28

作者：

BOOS, JB ^{[1
]}

KRUPPA, W ^{[1
]}

机构：

[1] SFA INC,LANDOVER,MD 20785

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 21期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19911185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The DC and RF performance of InAlAs/InGaAs/InP HEMTs fabricated using a double-recess gate process are reported. A gate-drain breakdown voltage as high as 16 V was observed. The HEMTs also exhibited a high source-drain breakdown voltage near pinchoff of 16 V and a low RF output conductance of 6 mS/mm. For a 1.4-mu-m gate length, an intrinsic transconductance or 560 mS/mm and f(T) and f(max) values of 16 and 40 GHz, respectively, were achieved.

引用

下载

页码：1909 / 1910

页数：2

共 50 条

[31] EXTREMELY HIGH-GAIN 0.15-MU-M GATE-LENGTH INALAS/INGAAS/INP HEMTS
HO, P
KAO, MY
CHAO, PC
DUH, KHG
BALLINGALL, JM
ALLEN, ST
TESSMER, AJ
SMITH, PM
ELECTRONICS LETTERS, 1991, 27 (04) : 325 - 327
[32] Enhancement of fmax to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs
Takahashi, Tsuyoshi
Kawano, Yoichi
Makiyama, Kozo
Shiba, Shoichi
Sato, Masaru
Nakasha, Yasuhiro
Hara, Naoki
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (01) : 89 - 95
[33] Monte Carlo comparison between InAlAs/InGaAs double-gate and standard HEMTs
Vasallo, B. G.
Gonzalez, T.
Pardo, D.
Mateos, J.
Wichmann, N.
Bollaert, S.
Cappy, A.
2007 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS, 2007, : 80 - +
[34] HIGHLY UNIFORM N-INALAS/INGAAS HEMTS ON A 3-IN INP SUBSTRATE USING PHOTOCHEMICAL SELECTIVE DRY RECESS ETCHING
KURODA, S
IMANISHI, K
HARADA, N
HIKOSAKA, K
ABE, M
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (02) : 105 - 107
[35] BODY CONTACTS IN INP-BASED INALAS/INGAAS HEMTS AND THEIR EFFECTS ON BREAKDOWN VOLTAGE AND KINK SUPPRESSION
SUEMITSU, T
ENOKI, T
ISHII, Y
ELECTRONICS LETTERS, 1995, 31 (09) : 758 - 759
[36] DRASTIC REDUCTION OF GATE LEAKAGE IN INALAS/INGAAS HEMTS USING A PSEUDOMORPHIC INALAS HOLE BARRIER LAYER
HEEDT, C
BUCHALI, F
PROST, W
BROCKERHOFF, W
FRITZSCHE, D
NICKEL, H
LOSCH, R
SCHLAPP, W
TEGUDE, FJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (10) : 1685 - 1690
[37] HIGH-PERFORMANCE W-BAND INALAS-INGAAS-INP HEMTS
STREIT, DC
TAN, KL
DIA, RM
HAN, AC
LIU, PH
YEN, HC
CHOW, PD
ELECTRONICS LETTERS, 1991, 27 (13) : 1149 - 1150
[38] Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs/InP HEMTs for high-frequency applications
Malmkvist, Mikael
Wang, Shumin
Grahn, Jan V.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (01) : 268 - 275
[39] 74GHz dynamic frequency divider using InAlAs/InGaAs/InP HEMTs
Murata, K
Yamane, Y
ELECTRONICS LETTERS, 1999, 35 (23) : 2024 - 2025
[40] Kink modification using body contact bias in InP based InAlAs/InGaAs HEMTs
Suemitsu, T
Enoki, T
Ishii, Y
ELECTRONICS LETTERS, 1996, 32 (12) : 1143 - 1144

← 1 2 3 4 5 →