INALAS/INGAAS/INP HEMTS WITH HIGH BREAKDOWN VOLTAGES USING DOUBLE-RECESS GATE PROCESS

被引：28

作者：

BOOS, JB ^{[1
]}

KRUPPA, W ^{[1
]}

机构：

[1] SFA INC,LANDOVER,MD 20785

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 21期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19911185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The DC and RF performance of InAlAs/InGaAs/InP HEMTs fabricated using a double-recess gate process are reported. A gate-drain breakdown voltage as high as 16 V was observed. The HEMTs also exhibited a high source-drain breakdown voltage near pinchoff of 16 V and a low RF output conductance of 6 mS/mm. For a 1.4-mu-m gate length, an intrinsic transconductance or 560 mS/mm and f(T) and f(max) values of 16 and 40 GHz, respectively, were achieved.

引用

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页码：1909 / 1910

页数：2

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